Optoelectronic Detectors Based on Low-Dimensional Atomic Crystals

Low-dimensional atomic crystals possess unique optical and electrical properties, which are of great significance for optoelectronic detector devices. We will study the characteristics of low-dimensional atomic crystals, including processes such as light absorption and charge carrier transport. Specifically, we will focus on key parameters such as optoelectronic conversion efficiency, carrier lifetime, light responsivity, and optimize the material's properties through design. By deeply understanding and controlling the properties of low-dimensional atomic crystals, we are committed to advancing the performance of optoelectronic detector devices and developing new prototype devices.


Selected works:

[1] Yunkun Yang, Junchen Zhou, Xiaoyi Xie, Xingchao Zhang, Zihan Li, Shanshan Liu, Linfeng Ai, Qiang Ma, Pengliang Leng, Minhao Zhao, Jun Wang*, Yi Shi*, and Faxian Xiu*, “Photodetection and Infrared Imaging Based on Cd3As2 Epitaxial Vertical Heterostructures”, ACS Nano 16, 8, 12244–12252 (2022).


[2] Zijie Dai, Manukumara Manjappa, Yunkun Yang, Thomas Cai Wei Tan, Bo Qiang, Song Han, Liang Jie Wong, Faxian Xiu*, Weiwei Liu*, Ranjan Singh*,“High Mobility 3D Dirac Semimetal (Cd3As2) for Ultrafast Photoactive Terahertz Photonics”, Advanced Functional Materials 31(17), 2011011 (2021).


[3] Hunhui Zhu#, Fengqiu Wang#*, Yafei Meng#, Xiang Yuan, Faxian Xiu*, Hongyu Luo, Yazhou Wang, Jianfeng Li*, Xinjie Lv, Liang He, Yongbing Xu, Junfeng Liu, Chao Zhang, Yi Shi, Rong Zhang, Shining Zhu, “A robust and tuneable mid-wave infrared optical switch enabled by bulk Dirac fermions”, Nature Communications 8,14111 (2017).


[4] Enze Zhang#, Peng Wang#, Zhe Li, Haifeng Wang, Chaoyu Song, Ce Huang, Zhi-Gang Chen, Lei Yang, Kaitai Zhang, Shiheng Lu, Weiyi Wang, Shanshan Liu, Hehai Fang, Xiaohao Zhou, Hugen Yan, Jin Zou,Xiangang Wan, Peng Zhou*,  Weida Hu* and Faxian Xiu*, “Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High Anisotropy ReSe2 Nanosheets”,ACS Nano 10 , 8067–8077 (2016)


[5] X. Yuan#, L. Tang#, P. Wang, Z. Chen, Y. Zou, X. Su, C. Zhang, Y. Liu, W. Wang, C. Liu, F. Chen,  J.Zou, P. Zhou, W. Hu*, F. Xiu*, “Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe”, Nano Research 8, 3332- 3341 (2015)


[6] Shanshan Liu, Xiang Yuan, Peng Wang, Zhi-Gang Chen, Lei Tang, Enze Zhang, Cheng Zhang, Yanwen Liu, Weiyi Wang, Cong Liu, Chen Chen, Jin Zou, Weida Hu*, Faxian Xiu*, “Controllable Growth of Vertical Heterostructure GaTexSe1-x/Si by Molecular Beam Epitaxy”,ACS Nano 9, 8592–8598 (2015)


[7] Xiang Yuan , Lei Tang , Shanshan Liu , Peng Wang , Zhi-Gang Chen , Cheng Zhang , Yanwen Liu , Weiyi Wang , Yichao Zou , Cong Liu , Nan Guo , Jin Zou , Peng Zhou*, Weida Hu*, and Faxian Xiu*,“Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy”,  Nano Letters 15, 3571–3577 (2015).ESI highly cited paper