O. Lopatiuk-Tirpak, L. Chernyak*, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, S.J. Pearton, K. Gartsman, Y. Feldman, A. Osinsky, and P. Chow, "Studies of minority carrier diffusion length increase in p-type ZnO:Sb", Journal of Applied Physics 100, 086101 (2006)
F. X. Xiu, L. J. Mandalapu, Z. Yang, and J. L. Liu*,G. F. Liu and J. A. Yarmoff, "Bi-induced acceptor states in ZnO by molecular-beam epitaxy", Applied Physics Letters 89, 052103 (2006)
O. Lopatiuk-Tirpak, W. V. Schoenfeld, and L. Chernyak*, F. X. Xiu, J. L. Liu, S. Jang, F. Ren, and S. J. Pearton, A. Osinsky and P. Chow, "Carrier concentration dependence of acceptor activation energy in p-type ZnO", Applied Physics Letters 88, 202110 (2006)
F. X. Xiu*, Zheng Yang, Dengtao Zhao, Jianlin Liu, Khan A. Alim, Alexander A. Balandin, Mikhail E. Itkis, and Rober C. Haddon, "ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy", Journal of Electronic Materials 35, 691-694 (2006)
Vladimir A. Fonoberov, Khan A. Alim, Alexander A. Balandin*, Faxian Xiu, and Jianlin Liu, "Photoluminescence investigation of the carrier recombination process in ZnO quantum dots and nanocrystals", Physical Review B 73, 165317 (2006)
F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu*, "Donor and acceptor competitions in phosphorus-doped ZnO", Applied Physics Letters 88, 152116 (2006)
F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. Liu*, "p-type ZnO films with solid source phosphorus doping by molecular-beam epitaxy", Applied Physics Letters 88, 052106 (2006)
L. J. Mandalapu, Z. Yang, F. X. Xiu, D. T. Zhao and J. L. Liu*,"Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection", Applied Physics Letters 88, 092103 (2006)
L. J. Mandalapu, F. X. Xiu, Z. Yang, D. T. Zhao and J. L. Liu*, "p-type behavior from Sb-doped ZnO heterojunction photodiodes", Applied Physics Letters 88, 112108 (2006)
F. X. Xiu*, Zheng Yang, Dengtao Zhao, Jianlin Liu, Khan A. Alim, Alexander A. Balandin, Mikhail E. Itkis, and Rober C. Haddon,"ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE", Journal of Crystal Growth 286, 61 (2006)
F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. Liu*, "Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy", Applied Physics Letters 87, 252102 (2005)
F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu*, and W. P. Beyermann, "High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy", Applied Physics Letters 87, 152101 (2005)
Min Zhao, Longtao Jiang, Gaohui Wu, Zuoyong, Faxian Xiu, "Friction and wear properties of AlNP/Al and TiB2P/Al composite materials", Journal of Materials Engineering 9, 57-59 (2004)
Qiaoying Zhou, Jiayu Chen, B. Pattada, M. O. Manasreh*, Faxian Xiu, Steve Puntigan, L. He, K. S. Ramaiah, and Hadis Morkoc, "Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures", Journal of Applied Physics 93, 10140 (2003)
